Manual Mask Aligner - MJB3

Features and Benefits

  • For research, laboratories, small series and pilot production
  • High-performance mask aligner
  • Wafer and substrate size up to 3”
  • Resolution far into the submicron region
Overview
Wafer size up to 3” Ø
Substrate size up to 3” x 3” (except MJB3 Standard: 2” x 2”)
Wafer / substrate thickness 0 – 4.5 mm
Mask size up to 4” x 4”
Exposure Modes
Vacuum contact (except MJB3 Standard)
Hard contact & soft contact
Exposure optics
Standard 280 – 450 nm (200W mercury lamp)
UV400 350 – 450 nm (350W mercury lamp)
UV300 280 – 350 nm (350W mercury lamp)
UV250 240 – 260 nm (500W Hg-Xe, PMMA resist)
UV200 210 – 230 nm (350W Cd-Xe, PMMA resist)
UV249 249 nm (KrF excimer laser)
UV193 193 nm (ArF excimer laser)
Uniformity
± 3% (2“ Ø ) (MJB3 Standard ± 5%)
± 5% (3“ Ø ) (MJB3 Standard ± 10%)
Maximum exposure area
3” x 3” (MJB3 Standard 3” Ø )
Microscopes
Microscope manipulator range of movement 50 x 50 mm
SUSS M200 SP
Splitfield Microscope
Objective distance, adjustable 24 – 91 mm
Optional 15 – 120 mm
Illumination Fiberoptic, 20W or 85W
SUSS M230 SP
Splitfield Microscope
Objective distance, adjustable 30 – 91 mm
Illumination Fiberoptic, 85W
SUSS M400
Normal Field Microscope
Illumination Direct 15W