Overview
| Wafer size |
Partial Wafers – 150 mm |
| Substrate size |
Partial Substrates – 6” x 6” |
| Exposure optics |
| UV400 350 – 450 nm |
Hg-Lamp 350W / 1000W |
| UV300 280 – 350 nm |
Hg-Lamp 350W / 1000W |
| UV250 240 – 260 nm |
Cd-Xe Lamp 350W |
| UV249 249 nm |
Excimer laser |
| UV193 193 nm |
Excimer laser |
|
10W average power at193 nm |
|
7,5W average power at193 nm |
|
Stabilized |
| Uniformity (150 mm dia.) |
± 5% |
| Exposure Modes |
| Proximity: |
|
| Alignment/ Exposure distance (selectable in 1 µ m steps) |
0 – 999 µ m |
| Soft contact: |
|
| Adjustable contact pressure |
0.03 – 0.07 N/cm² |
| Hard contact: |
|
| Adjustable contact pressure between chuck and wafer via nitrogen |
0.04 – 0.16 N/cm² |
