Overview
| Alignment Stage |
| Mask to wafer aligning range X and Y |
|
| Coarse movement |
10 mm |
| Fine movement | 1 mm
| Reduction ratio of manipulator |
|
| Coarse movement |
4:1 |
| Fine movement |
40:1 |
| Rotation range of alignment stage | 10°
| X and Y positioning range of mask-to-mask alignment system |
|
| using double micrometer control |
10 mm |
| Maximum wafer diameter | 3“
| Maximum mask size |
4” x 4” |
| Alignment Accuracy |
| Mask to wafer |
± 2.0 µm |
| Mask to mask |
± 1 µm |
| Separation |
|
| Adjustment range |
0 – 990 µm |
| SUSS Horizontal Splitfield-Microscope |
|
| Magnification |
35x, 100x |
| Halogen illuminator with fiber optic light guides |
12V, 20W |
| Optional darkfield (oblique) illumination (up to 2” Ø ) |
12V, 20W |
| Exposure System |
| 2 UV high pressure mercury arc lamps, each |
350W |
| 2 DC exposure lamp power supply units, each |
220V / 50Hz or 110V / 60Hz |
| Power requirement |
1500W |
| Exposure beam, Ø |
80 mm |
| Timer range |
0.3 sec … 30 hrs |
| Light integrator |
0.1 sec … 16 min. |
